Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2006-07-24

2008-03-25

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S051000, C365S052000

Reexamination Certificate

active

07349238

ABSTRACT:
An operation switch circuit receives a command specifying operational specifications from a host. An operation control circuit controls the time of voltage application to a plate line based on an output signal from the operation switch circuit, to attain volatile-mode operation in a first memory region and nonvolatile-mode operation in a second memory region, for example.

REFERENCES:
patent: 5297077 (1994-03-01), Imai et al.
patent: 5455786 (1995-10-01), Takeuchi et al.
patent: 5726930 (1998-03-01), Hasegawa et al.
patent: 5761733 (1998-06-01), Miyauchi
patent: 5768182 (1998-06-01), Hu et al.
patent: 5828596 (1998-10-01), Takata et al.
patent: 5910911 (1999-06-01), Sekiguchi et al.
patent: 6434038 (2002-08-01), Ohno
patent: 7120041 (2006-10-01), Kang
patent: 2007/0211512 (2007-09-01), Shuto
patent: 3-5996 (1991-01-01), None

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