Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2005-01-05
2008-07-29
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S627000, C257SE27108, C257SE21632, C438S199000
Reexamination Certificate
active
07405436
ABSTRACT:
A semiconductor structure having improved carrier mobility is provided. The semiconductor structures includes a hybrid oriented semiconductor substrate having at least two planar surfaces of different crystallographic orientation, and at least one CMOS device located on each of the planar surfaces of different crystallographic orientation, wherein each CMOS device has a stressed channel. The present invention also provides methods of fabricating the same. In general terms, the inventive method includes providing a hybrid oriented substrate having at least two planar surfaces of different crystallographic orientation, and forming at least one CMOS device on each of the planar surfaces of different crystallographic orientation, wherein each CMOS device has a stressed channel.
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M. Yang, et al., “High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations”, IBM Semiconductor Research and Development Center, (2003).
R. Arghavani, et la., “Stress Management in Sub-90-nm Transistor Architecture”, IEEE Transactions on Electron Devices, vol. 51, No. 10 (Oct. 2004).
Chidambarrao Dureseti
Holt Judson R.
Ieong Meikei
Ouyang Oiging C.
Panda Siddhartha
International Business Machines - Corporation
Malsawma Lex
Scully , Scott, Murphy & Presser, P.C.
Tuchman, Esq. Ido
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