Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-06-20
2008-01-08
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C257SE21561
Reexamination Certificate
active
07316948
ABSTRACT:
To obtain a semiconductor device and a method of manufacturing the same which can reduce influence of fluctuation in characteristic among transistors due to fluctuation in laser light irradiation number and laser light intensity on a semiconductor. There is provided a semiconductor device with plural pixels having transistors forming a matrix pattern, in which: the transistors have semiconductors crystallized by laser light irradiation; the semiconductors stretch over at least two pixels; the length of each of the semiconductors is longer than the pixel pitch of the pixels; and when the scan pitch of the laser light is given as M and the pixel pitch of the pixels is given as N, the semiconductors are irradiated with the laser light N/M times or more.
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Anzai Aya
Kimura Hajime
Yamazaki Shunpei
Booth Richard A.
Fish & Richardson P.C.
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