Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-01-13
2008-03-18
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S199000, C438S795000, C438S508000, C257SE21324, C257SE21632
Reexamination Certificate
active
07344929
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a capping layer (210) over a transistor device having source/drain regions (150, 155) located over a substrate (110), the capping layer (210) having a degree of reflectivity, and annealing the transistor device through the capping layer (210) using photons (310), the annealing of the transistor device affected by the degree of reflectivity.
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Jain Amitabh
Mehrotra Manoj
Garner Jacqueline J.
Isaac Stanetta
Lebentritt Michael
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