Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-04-26

2008-03-04

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S742000, C438S743000

Reexamination Certificate

active

07338906

ABSTRACT:
The present invention relates to a method for fabricating a semiconductor device with a fine pattern even without decreasing a line width of a photoresist pattern. The method includes the steps of: forming a target etching layer on a substrate; forming a plurality of etch mask patterns with high pattern density in a first region and a low pattern density in a second region on the target etching layer; removing a native oxide layer grown on the target etching layer such that a line width of each etch mask pattern decreases in more extents in the second region than in the first region; and etching the target etching layer by using the plurality of etch mask patterns as a mask.

REFERENCES:
patent: 6200907 (2001-03-01), Wang et al.
patent: 6204130 (2001-03-01), Gardner et al.
patent: 6551941 (2003-04-01), Yang et al.
patent: 2002/0182806 (2002-12-01), Kim
patent: 11-087322 (1999-03-01), None
patent: 10-2005-0028781 (2005-03-01), None
patent: 10-2005-0041432 (2005-05-01), None
patent: 10-2005-0122737 (2005-12-01), None

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