Method for manufacturing an integrated circuit using a...

Details Method for manufacturing an integrated circuit using a... Method for manufacturing an integrated circuit using a...

2008-03-18

2008-03-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S199000, C438S795000, C438S508000, C257SE21324, C257SE21632

Reexamination Certificate

active

11034791

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a capping layer (210) over a transistor device having source/drain regions (150, 155) located over a substrate (110), the capping layer (210) having a degree of reflectivity, and annealing the transistor device through the capping layer (210) using photons (310), the annealing of the transistor device affected by the degree of reflectivity.

REFERENCES:
patent: 5139971 (1992-08-01), Giridhar et al.
patent: 5523262 (1996-06-01), Fair et al.
patent: 6790714 (2004-09-01), Hirano et al.
patent: 7084052 (2006-08-01), Hirano et al.
patent: 7189624 (2007-03-01), Ito

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