Integrated circuit (IC) with high-Q on-chip discrete capacitors

Details Integrated circuit (IC) with high-Q on-chip discrete capacitors Integrated circuit (IC) with high-Q on-chip discrete capacitors

2008-03-18

2008-03-18

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S347000, C257S532000

Reexamination Certificate

active

10908081

ABSTRACT:
A semiconductor structure that may be a discrete capacitor, a Silicon On Insulator (SOI) Integrated Circuit (IC) including circuits with discrete such capacitors and/or decoupled by such discrete capacitors and an on-chip decoupling capacitor (decap). One capacitor plate may be a well (N-well or P-well) in a silicon bulk layer or a thickened portion of a surface silicon layer. The other capacitor plate may be doped polysilicon and separated from the first capacitor plate by capacitor dielectric, e.g., CVD or thermal oxide. Contacts to each of the capacitor plates directly connect and extend from the respective plates, such that direct contact is available from both plates.

REFERENCES:
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