Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2008-01-01
2008-01-01
Visconti, Geraldina (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S905000
Reexamination Certificate
active
11409207
ABSTRACT:
In a pattern formation method, a resist film made of a chemically amplified resist material including a first polymer having hemiacetal or hemiketal is formed on a substrate. Then, with a liquid provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.
REFERENCES:
patent: 6303263 (2001-10-01), Chen et al.
patent: 6902859 (2005-06-01), Yamamoto et al.
patent: 2003/0127048 (2003-07-01), Kokubo et al.
patent: 2005/0026070 (2005-02-01), Lee et al.
M. Switkes and M. Rothschild, “Immersion lithography at 157 nm”, J. Vac. Sci. Technol., vol. B19, p. 2353 (2001).
B. W. Smith, A. Bourov, Y. Fan, L. Zavyalova, N. Lafferty, F. Cropanese, “Approaching the numerical aperture of water—Immersion Lithography at 193 nm”, Proc. SPIE, vol. 5377, p. 273 (2004).
R. Dammel. et al. “193 nm Immersion Lithography—Taking the Plunge”. Journal of Photopolymer Science and Technology, 2004, p. 587-602, vol. 17, No. 4. Chiba, JP.
W. Hinsberg et al. “Liquid Immersion Lithography—Evaluation of Resist Issues”. Proceedings of SPIE—The International Society for Optical Engineering, p. 21-31, vol. 5376, No. 1 USA, 2004.
Partial European Search Report in corresponding European Patent Application No. EP 06006301.3-1226, dated Nov. 17, 2006.
Endo Masayuki
Sasago Masaru
Matsushita Electric - Industrial Co., Ltd.
Visconti Geraldina
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