Method of making a differential pressure sensor

Details Method of making a differential pressure sensor Method of making a differential pressure sensor

2008-05-06

2008-05-06

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S053000, C438S051000, C438S050000, C438S508000

Reexamination Certificate

active

11053115

ABSTRACT:
In a method for manufacturing a micromechanical semiconductor component, e.g., a pressure sensor, a locally limited, buried, and at least partially oxidized porous layer is produced in a semiconductor substrate. A cavity is subsequently produced in the semiconductor substrate from the back, directly underneath the porous first layer, using a trench etch process. The porous first layer is used as a stop layer for the trench. Thin diaphragms having a low thickness tolerance may thus be produced for differential pressure measurement.

REFERENCES:
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patent: 5320705 (1994-06-01), Fujii et al.
patent: 5357808 (1994-10-01), Fung et al.
patent: 2004/0048430 (2004-03-01), Benzel et al.
patent: 100 32 579 (2003-01-01), None
patent: 101 38 759 (2003-03-01), None

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