Method for preparing a structure with high aspect ratio

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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Details

C438S702000, C438S734000, C438S740000

Reexamination Certificate

active

11078435

ABSTRACT:
The present invention discloses a method for preparing a structure with high aspect ratio, which can be a trench or a conductor. A first mask is formed on a substrate, and a first etching process is performed to remove the substrate uncovered by the first mask to form at least one concavity. A second mask is formed on the surface of the prepared structure, a second etching process is then performed to remove the second mask on the concavity, and a third etching process is performed subsequently to extend the depth of the concavity into the substrate. To prepare a conductor with high aspect ratio in the substrate, the first mask and the second mask are preferably made of dielectric material or metal. In addition, to prepare a trench with high aspect ratio in a silicon substrate, the first mask and the second mask are preferably made of dielectric material.

REFERENCES:
patent: 3599031 (1971-08-01), Beggs
patent: 5110752 (1992-05-01), Lu
patent: 5858877 (1999-01-01), Dennison et al.
patent: 6087269 (2000-07-01), Williams
patent: 6451705 (2002-09-01), Trapp et al.
patent: 6593246 (2003-07-01), Hasegawa et al.
Wolf et al, Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press: Sunset Beach, CA, 2000, pp. 177-178.

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