Methods for improving quality of high temperature oxide...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S192000, C257SE21191, C257SE21241, C438S778000

Reexamination Certificate

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11431087

ABSTRACT:
A method and apparatus are disclosed for reducing the concentration of chlorine and/or other bound contaminants within a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant such as dichlorosilane (DCS) and an oxygen-providing reactant such as N2O. In one embodiment, a DCS-HTO film is annealed by heating N2O gas to a temperature in the range of about 825° C. to about 950° C. so as to trigger exothermic decomposition of the N2O gas and flowing the heated gas across the DCS-HTO film so that disassociated atomic oxygen radicals within the heated N2O gas can transfer disassociating energy to chlorine atoms bound within the DCS-HTO film and so that the atomic oxygen radicals can fill oxygen vacancies within the semiconductor-oxide matrix of DCS-HTO film. An improved ONO structure may be formed with the annealed DCS-HTO film for use in floating gate or other memory applications.

REFERENCES:
patent: 5312783 (1994-05-01), Takasaki et al.
patent: 6218315 (2001-04-01), Ballamine et al.
patent: 6461982 (2002-10-01), DeBoer et al.
patent: 6509283 (2003-01-01), Thomas
patent: 6537461 (2003-03-01), Nakahara et al.
patent: 6930060 (2005-08-01), Chou et al.

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