Method and structure for implanting bonded substrates for...

Details Method and structure for implanting bonded substrates for... Method and structure for implanting bonded substrates for...

2008-07-15

2008-07-15

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S459000, C257SE21122

Reexamination Certificate

active

11292395

ABSTRACT:
A partially completed multi-layered substrate, e.g., silicon on silicon. The substrate has a thickness of material from a first substrate. The thickness of material comprises a first face region. The substrate has a second substrate having a second face region. Preferably, the first face region of the thickness of material is joined to the second face region of the second substrate. The substrate has an interface region formed between the first face region of the thickness of material and the second face region of the second substrate. A plurality of particles are implanted within a portion of the thickness of the material and a portion of the interface region to electrically couple a portion of the thickness of material to a portion of the second substrate.

REFERENCES:
patent: 2007/0231850 (2007-10-01), Geoffrey et al.
B.N. Mukashev et al.,Hydrogen Implantation into Silicon: Infra-Red Absorption Spectra and Electrical Properties, Institute of High Energy Physics, Academy of Sciences of the Kazakh SSR, Alma-Ata1; 91, 509 (1985).

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