Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-07-29
2008-07-29
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S199000, C438S630000, C438S649000, C438S655000
Reexamination Certificate
active
11424373
ABSTRACT:
A low contact resistance CMOS integrated circuit and method for its fabrication are provided. The CMOS integrated circuit comprises a first transition metal electrically coupled to the N-type circuit regions and a second transition metal different than the first transition metal electrically coupled to the P-type circuit regions. A conductive barrier layer overlies each of the first transition metal and the second transition metal and a plug metal overlies the conductive barrier layer.
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International Search Report for International Application No. PCT/US2007/007549, mailed Aug. 22, 2007, 3 pages.
Advanced Micro Devices , Inc.
Ingrassia Fisher & Lorenz P.C.
Lee Hsien-ming
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