Method for fabricating thin film transistor

Details Method for fabricating thin film transistor Method for fabricating thin film transistor

2008-05-20

2008-05-20

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S166000

Reexamination Certificate

active

10713219

ABSTRACT:
When a gettering sink is removed by using alkaline solution of etchant having a high selectivity to the gettering sink and a barrier film functioning as an etching stopper, residue of gettering is left. However, according to the present invention, a semiconductor film that serves as a gettering sink contains nitrogen at concentration of 1×1018atoms/cm3or lower, oxygen at concentration of 8×1019atoms/cm3or lower, and noble gas at concentration is of 1×1020atoms/cm3or higher. In order to achieve the above-described impurity concentrations, a concentration of oxygen that is an impurity element in a chamber is reduced by using a flammable gas for heating and exhausting oxygen.

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