Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-05-20

2008-05-20

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S978000, C257SE21413

Reexamination Certificate

active

11080769

ABSTRACT:
Manufacture of TFTs corresponding to various circuits makes structures thereof complex, which involves a larger number of manufacturing steps. Such an increase in the number of the manufacturing steps leads to a higher manufacturing cost and a lower manufacturing yield. In the invention, a high concentration of impurities is doped by using as masks a tapered resist that is used for the manufacture of a tapered gate electrode, and the tapered gate electrode, and then the tapered gate electrode is etched in the perpendicular direction using the resist as a mask. A semiconductor layer under the thusly removed tapered portion of the gate electrode is doped with a low concentration of impurities.

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