Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2008-05-20

2008-05-20

Rose, Kiesha (Department: 4176)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S723000, C438S712000, C438S743000, C438S756000, C438S757000, C257SE21577, C257SE21579

Reexamination Certificate

active

11213301

ABSTRACT:
A semiconductor device may be manufactured by a method that includes forming an etch stop layer on a semiconductor substrate, sequentially forming a first interlayer insulating layer, a first diffusion barrier, a second interlayer insulating layer, and a second diffusion barrier on the etch stop layer, forming a via hole exposing the etch stop layer by etching the second diffusion barrier, the second interlayer insulating layer, the first diffusion barrier, and the first interlayer insulating layer, forming a first trench overlapping the via hole by etching the second diffusion barrier and the second interlayer insulating layer, forming a second trench continuous to the first trench by etching the first diffusion barrier and part of the first interlayer insulating layer, and removing the etch stop layer exposed through the via hole, wherein the first and second trenches are etched under different dry etching conditions.

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