Phase change memory device

Details Phase change memory device Phase change memory device

2008-07-29

2008-07-29

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S063000, C365S148000

Reexamination Certificate

active

11648558

ABSTRACT:
A phase change memory device includes a semiconductor substrate which includes a plurality of phase change memory cells, a plurality of local bit lines extending over the semiconductor substrate, each of the plurality of local bit lines being coupled to the plurality of phase change memory cells, and a plurality of global bit lines extending over the plurality of local bit lines, each of the plurality of global bit lines being selectively coupled to the plurality of local bit lines. The plurality of global bit lines are located at two or more different wiring line levels over the semiconductor substrate.

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patent: WO 03/009302 (2003-01-01), None

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