Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2008-04-22
2008-04-22
Lee, Sin (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S311000, C430S313000, C430S323000, C430S331000
Reexamination Certificate
active
10975047
ABSTRACT:
The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a polyhydric alcohol. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
REFERENCES:
patent: 3287127 (1966-11-01), Dershowitz
patent: 4851168 (1989-07-01), Graiver et al.
patent: 6296993 (2001-10-01), Sowinski et al.
patent: 6306915 (2001-10-01), Murata
patent: 6555607 (2003-04-01), Kanda et al.
patent: 2003/0027085 (2003-02-01), Mullee
patent: 2003/0102285 (2003-06-01), Nozaki et al.
patent: 2003/0157801 (2003-08-01), Kozawa et al.
patent: 2004/0072098 (2004-04-01), Kozawa et al.
patent: 1315043 (2003-05-01), None
patent: 1385059 (2004-01-01), None
patent: 1398671 (2004-03-01), None
patent: 1 429 185 (2004-06-01), None
patent: 5-197151 (1993-08-01), None
patent: 10-73927 (1998-03-01), None
patent: 11-204399 (1999-07-01), None
patent: 2000-267268 (2000-09-01), None
patent: 2000-347414 (2000-12-01), None
patent: 2001-19860 (2001-01-01), None
patent: 2001-33984 (2001-02-01), None
patent: 2001-228616 (2001-08-01), None
patent: 2002-6491 (2002-01-01), None
patent: 2002-49161 (2002-02-01), None
patent: 2003-84457 (2003-03-01), None
patent: 2003-131400 (2003-05-01), None
patent: 2004-53723 (2004-02-01), None
patent: 1020040030319 (2004-04-01), None
Takeo Ishibashi et al., “Advanced Micro-Lithography Process with Chemical Shrink Technology”, Jpn. J. Appln. Phys., vol. 40, pp. 419-425 (2001).
Mamoru Terai et al., “Below 70-nm Contact Hole Pattern with RELACS Process on ArF Resist”, Proceedings of SPIE vol. 5039, pp. 789-797 (2003).
Korean Office Action dated Feb. 27, 2006 of a corresponding Korean Application.
Korean Office Action dated Aug. 17, 2006 of 10-2004-0086968.
B. Prince; Semiconductor Memories; Wiley (1991); 2nd edition, pp. 9, 90 and 91.
Kozawa Miwa
Namiki Takahisa
Nozaki Koji
Lee Sin
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Resist pattern thickening material and process for forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resist pattern thickening material and process for forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resist pattern thickening material and process for forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3936942