Method for etching an SiO.sub.2 film

Details Method for etching an SiO.sub.2 film Method for etching an SiO.sub.2 film

1993-03-25

1994-07-12

Quach, T. N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 437228, 437946, 148DIG17, H01L 21306

Patent

active

053285581

ABSTRACT:
An NF.sub.3 /H.sub.2 mixture as a feed gas for an etchant for etching an SiO.sub.2 film on an silicon wafer is used with a 1 : 160 NF.sub.3 /H.sub.2 mixed ratio. The mixture is made into plasma, and activated species of fluorine, hydrogen and nitrogen are supplied downstream to allow the species to be adsorbed in and on the SiO.sub.2 film. The NF.sub.3 /H.sub.2 mixed ratio of the mixture is so set as not to effect the etching of the SiO.sub.2 film under a chemical action. Then the adsorbed activated species are irradiated with Ar low energy ions so that the activated species are excited and etch the SiO.sub.2 film. During etching, the semiconductor wafer is maintained to about -100.degree. C. Less damage is caused to the silicon wafer and etching can be made in a high selection ratio.

REFERENCES:
patent: 4711698 (1987-12-01), Douglas
patent: 4807016 (1989-02-01), Douglas
patent: 4985372 (1991-01-01), Narita
patent: 5100504 (1992-03-01), Kawai et al.
patent: 5236868 (1993-08-01), Nulman

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