Non-volatile memory

Details Non-volatile memory Non-volatile memory

2008-04-08

2008-04-08

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE29300

Reexamination Certificate

active

11307874

ABSTRACT:
A non-volatile memory including a substrate, a select gate, two floating gates, a control gate, and a doped region is described. The select gate is disposed on the substrate. The two floating gates are disposed on both sides of the select gate, and the top surface of the floating gates is higher than that of the select gate forming a hollow structure on the select gate between the two floating gates. The control gate disposed on the substrate covers the select gate and the two floating gates and fills the hollow structure. The doped region is disposed in the substrate on one side of the two floating gates opposite to the select gate.

REFERENCES:
patent: 5268585 (1993-12-01), Yamauchi
patent: 5427968 (1995-06-01), Hong
patent: 5476801 (1995-12-01), Keshtbod
patent: 5753953 (1998-05-01), Fukumoto
patent: 6764905 (2004-07-01), Jeng et al.
patent: 6930348 (2005-08-01), Wang
patent: 2007/0085132 (2007-04-01), Sanada et al.

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