Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-01
2008-04-01
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27132, C257SE27133, C257S232000, C257S233000, C257S234000
Reexamination Certificate
active
10526564
ABSTRACT:
The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for the same. A MOS type imaging apparatus1includes an imaging region10and a driving region20both formed on a p-type silicon substrate (hereinafter called an “Si substrate”)31. The imaging region10includes six pixels11to16disposed in a shape of a matrix having 2 rows and 3 columns. The driving region20includes a timing generation circuit21, a vertical shift resistor22, a horizontal shift resistor23, a pixel selection circuit24, and so on. All transistors included in the pixels11to16in the imaging region and the circuits21to24in the driving circuit region20are of n-channel MOS type.
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Supplementary Search Report dated Jan. 26, 2007.
Liu Benjamin Tzu-Hung
McDermott Will & Emery LLP
Tran Minhloan
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