Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-01
2008-04-01
Robinson, Mark A. (Department: 4122)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S107000, C257S173000
Reexamination Certificate
active
11504990
ABSTRACT:
The drains of the PMOS transistor and the NMOS transistor of a driver are separated and connected to two spaced-apart pins. The spaced-apart pins provide ESD protection to the NMOS transistor, which can be turned on during an ESD event by voltages that propagate through the PMOS transistor during the ESD event.
REFERENCES:
patent: 5477414 (1995-12-01), Li et al.
patent: 5623156 (1997-04-01), Watt
patent: 5623387 (1997-04-01), Li et al.
patent: 5689133 (1997-11-01), Li et al.
patent: 6529359 (2003-03-01), Verhaege et al.
patent: 6545520 (2003-04-01), Maloney et al.
patent: 7110230 (2006-09-01), Van Camp et al.
patent: 7119405 (2006-10-01), Chen et al.
Beek Marcel ter
Chu Charles
Lam Cathy
National Semiconductor Corporation
Pickering Mark C.
Robinson Mark A.
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