Method for forming contact plug of semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S629000

Reexamination Certificate

active

11026226

ABSTRACT:
Disclosed is a method for fabricating a semiconductor device; and more particularly, to a method for fabricating a plurality of contact plugs capable of preventing a self-aligned contact (SAC) fail during forming a plurality of contact holes formed by using a SAC etching process and a defect generation during performing a plug isolation process. The present invention prevents a Pinocchio defect that is a fundamental problem caused by the chemical mechanical polishing (CMP) process and simplifies a subsequent cleaning process performed according to the particles. Accordingly, it is possible to develop products with a high quality and a high speed and to replace the CMP process having a high unit process cost with an etch back process, thereby providing an effect of increasing a price competitiveness.

REFERENCES:
patent: 6337275 (2002-01-01), Cho et al.
patent: 6403459 (2002-06-01), Ohashi et al.
patent: 6458680 (2002-10-01), Chung et al.
patent: 6518157 (2003-02-01), Nam et al.
patent: 6689697 (2004-02-01), Jiang et al.

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