Ion implanter, and angle measurement apparatus and beam...

Details Ion implanter, and angle measurement apparatus and beam... Ion implanter, and angle measurement apparatus and beam...

2008-04-15

2008-04-15

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S397000

Reexamination Certificate

active

11330234

ABSTRACT:
An apparatus is provided which is capable of measuring an angle between a holder and an ion beam without generating particles, with a simple structure, in a short time and at high accuracy even during an implantation state. An angle measurement apparatus is configured to: measure an angle of the ion beam by measuring beam plasma produced and emitting light when the ion beam collides with residual gas, with two cameras at two positions in a beam traveling direction; measure an angle of the holder by measuring light from a linear light source provided on the holder; and thereby measure the angle between the ion beam and the holder.

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Search Report Under Section 17(5); The Patent Office, May 9, 2006; 1 page.
Japanese Notification of Reasons for Refusal (8 pages) and Decision of Refusal (1 page); Patent application 2005-009078—Patent Examination First Department.

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