Protection of Cu damascene interconnects by formation of a...

Details Protection of Cu damascene interconnects by formation of a... Protection of Cu damascene interconnects by formation of a...

2008-07-08

2008-07-08

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S687000, C257SE21575

Reexamination Certificate

active

10980076

ABSTRACT:
Methods of protecting exposed metal damascene interconnect surfaces in a process for making electronic components and the electronic components made according to such methods. An integrated circuit structure having damascene regions with exposed metal surfaces is provided into a closed processing chamber, whereby a first reactant is contacted to the exposed metal surfaces to transform a top portion of the metal layer into a protective self-aligned buffer layer. Reacting molecules of the first reactant with metal atoms of this metal layer forms the protective self-aligned buffer layer entirely within such metal layer. Alternatively, adsorbing surface-active reactant molecules onto the exposed metal surface forms the protective self-aligned buffer layer. A second reactant may be contacted to the protective self-aligned buffer layer to form a self-aligned dielectric cap layer directly over the protective self-aligned buffer layer.

REFERENCES:
patent: 6143657 (2000-11-01), Liu et al.
patent: 6181013 (2001-01-01), Liu et al.
patent: 6271595 (2001-08-01), McGahay et al.
patent: 6821890 (2004-11-01), McGahay et al.
patent: 6869873 (2005-03-01), Bradshaw et al.
patent: 7060619 (2006-06-01), Cowley et al.
patent: 2006/0046479 (2006-03-01), Rajagopalan et al.
patent: 2000-252278 (2000-09-01), None

Affiliated with

Also associated with

Rating

Protection of Cu damascene interconnects by formation of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Protection of Cu damascene interconnects by formation of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Protection of Cu damascene interconnects by formation of a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3928764