Method for forming a capacitor

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S318000, C430S321000, C430S317000, C430S311000, C361S321600

Reexamination Certificate

active

11594073

ABSTRACT:
In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a photoresist film formed on a substrate. An interfered light generated from the irradiated light is transmitted through other portions of the photoresist film except a ring-shaped portion of the photoresist film having a predetermined width along a boundary of the selected portion. The photoresist film is exposed using the interfered light and the light irradiated onto the selected portion. A cylindrical photoresist pattern having a minute width may be formed through developing the photoresist film. With the cylindrical pattern, the capacitor can be easily formed.

REFERENCES:
patent: 5583069 (1996-12-01), Ahn et al.
patent: 5656536 (1997-08-01), Wu
patent: 5716884 (1998-02-01), Hsue et al.
patent: 5733808 (1998-03-01), Tseng
patent: 5807782 (1998-09-01), Koh et al.
patent: 5877052 (1999-03-01), Lin et al.
patent: 6060353 (2000-05-01), Koh
patent: 2004/0111693 (2004-06-01), Lin et al.
patent: 2001 0092874 (2001-10-01), None

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