Controlled breakdown phase change memory device

Details Controlled breakdown phase change memory device Controlled breakdown phase change memory device

2008-03-25

2008-03-25

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S654000, C257S003000, C257S004000, C257SE21001

Reexamination Certificate

active

10939237

ABSTRACT:
A phase change memory material may be deposited over an electrode in a pore through an insulator. The adherence of the memory material to the insulator may be improved by using a glue layer. At the same time, a breakdown layer may be formed in the pore between the memory material and electrode.

REFERENCES:
patent: 6512241 (2003-01-01), Lai
patent: 2003/0001242 (2003-01-01), Lowrey et al.
patent: 2005/0018526 (2005-01-01), Lee
patent: 2005/0032319 (2005-02-01), Dodge

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