Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-08
2008-04-08
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S053000
Reexamination Certificate
active
11206999
ABSTRACT:
A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this order. The i layer is made of an amorphous iron silicide film containing hydrogen in accordance with the present invention, and is formed on the n layer by supplying an iron vapor into a plasma of a material gas in which a silane type gas and a hydrogen gas are mixed. In the i layer, dangling bonds of silicon atoms and/or iron atoms are terminated with hydrogen, whereby a number of trap levels which may occur in the amorphous iron silicide film are eliminated.
REFERENCES:
patent: 3927225 (1975-12-01), Cordes et al.
patent: 4218291 (1980-08-01), Fukuyama et al.
patent: 4633033 (1986-12-01), Nath et al.
patent: 4705912 (1987-11-01), Nakashima et al.
patent: 4713493 (1987-12-01), Ovshinsky
patent: 4765845 (1988-08-01), Takada et al.
patent: 4926230 (1990-05-01), Yamagishi et al.
patent: 5127964 (1992-07-01), Hamakawa et al.
patent: 5288684 (1994-02-01), Yamazaki et al.
patent: 5507881 (1996-04-01), Sichanugrist et al.
patent: 5681402 (1997-10-01), Ichinose et al.
patent: 5741615 (1998-04-01), Saitoh et al.
patent: 6229766 (2001-05-01), Saurer et al.
patent: 2002/0058387 (2002-05-01), Ito
patent: 2002/0117025 (2002-08-01), Uchikoshi et al.
patent: 2003/0176270 (2003-09-01), Gegner
patent: A 4-210463 (1992-07-01), None
patent: A 7-166323 (1995-06-01), None
patent: A 10-130826 (1998-05-01), None
patent: A 2000-178713 (2000-06-01), None
patent: A 2001-64099 (2001-03-01), None
patent: A 2002-47569 (2002-02-01), None
Morooka Hisao
Nishi Kazuo
Yamada Hiroshi
Le Thao P.
Oliff & Berridg,e PLC
Semiconductor Energy Laboratory Co,. Ltd.
TDK Corporation
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