Ferroelectric RAM device and driving method

Details Ferroelectric RAM device and driving method Ferroelectric RAM device and driving method

2008-09-16

2008-09-16

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S230060, C365S189090

Reexamination Certificate

active

11015428

ABSTRACT:
A ferroelectric RAM (Random Access Memory) device includes at least one memory cell constructed of one access transistor operating by a word line enable signal, and one ferroelectric capacitor connected between a bit line and the access transistor. The device has a cell array structure based on a repeated array of the memory cells. The device also includes a word line driver suitable for a high integration and reducing power consumption. The driving method in the ferroelectric RAM device generates a word line enable signal having a level of power source voltage, to read and write data. The method has advantages of being suitable for a high integration, enhancing an operating speed and reducing power consumption and providing stabilized read and write operations.

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