Non-volatile memory (NVM) retention improvement utilizing...

Details Non-volatile memory (NVM) retention improvement utilizing... Non-volatile memory (NVM) retention improvement utilizing...

2008-05-20

2008-05-20

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S318000, C257S314000, C257SE21680, C257SE29300, C438S257000

Reexamination Certificate

active

11044511

ABSTRACT:
An electrical shield is provided in a non-volatile memory (NVM) cell structure to protect the cell's floating gate from any influence resulting from charge redistribution in the vicinity of the floating gate during a programming operation. The shield may be created from the second polysilicon layer or other conductive material covering the floating gate. The shield may be grounded. Alternately, it may be connected to the cell's control gate electrode resulting in better coupling between the floating gate and the control gate. It is not necessary that the shield cover the floating gate completely, the necessary protective effect is achieved if the coupling to the dielectric layers surrounding the floating gate is reduced.

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