Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-04-29
2008-04-29
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S142000, C430S022000
Reexamination Certificate
active
11209722
ABSTRACT:
A method of manufacturing a semiconductor device. The device includes a plurality of layers on a semiconductor substrate. The method includes the steps of dividing a pattern of at least one layer into a plurality of sub-patterns, and joining the divided sub-patterns to perform patterning. A layer that includes wiring substantially affects operation of the semiconductor device depending on a positional relationship to any other wiring. The patterning is performed by one-shot exposure using a single mask.
REFERENCES:
patent: 5561317 (1996-10-01), Momma et al.
patent: 5731131 (1998-03-01), Momma et al.
patent: 6192290 (2001-02-01), Adams
patent: 6204912 (2001-03-01), Tsuchiya et al.
patent: 6238851 (2001-05-01), Nishi
patent: 6828085 (2004-12-01), Kochi et al.
patent: 0 557 079 (1993-08-01), None
patent: 0 959 501 (1999-11-01), None
patent: 986094 (2000-03-01), None
patent: 4-326507 (1992-11-01), None
patent: 10-229039 (1998-08-01), None
patent: 2000-3859 (2000-01-01), None
Korean Official Letters/Search Report dated Jul. 27, 2005, issued in corresponding Korean patent application No. 10-2003-0065363.
Ford Kenisha V
Lebentritt Michael
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