Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-07-01
2008-07-01
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C438S482000, C438S487000, C257SE21412, C257SE21475
Reexamination Certificate
active
11512113
ABSTRACT:
[Problem] To provide technology that allows, by controlling a crystal orientation, forming a crystalline semiconductor film aligned in orientation and obtaining a crystalline semiconductor film whose impurity concentration is reduced.[Means, for Resolution] On an insulating surface, a first semiconductor region made of an amorphous semiconductor is formed, a continuous wave laser beam is scanned from one end of the first semiconductor region to the other end thereof, thereby the first semiconductor region is once melted and crystallized, thereafter in order to form an active layer of a TFT the first semiconductor region is etched, and thereby a second semiconductor region is formed. In a pattern of the second semiconductor region formed by the etching, in order to improve a field-effect mobility in the TFT, a scanning direction of the laser beam is allowed roughly coinciding with a channel length direction in a thin film transistor. [Selected Drawing] FIG.1.
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Costellia Jeffrey L.
Nixon & Peabody LLP
Sarkar Asok Kumar
Semiconductor Energy Laboratory Co,. Ltd.
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