Method and apparatus providing CMOS imager device pixel with...

Details Method and apparatus providing CMOS imager device pixel with... Method and apparatus providing CMOS imager device pixel with...

2008-07-08

2008-07-08

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S204000, C257S291000, C257S347000, C257SE21170, C257SE21185, C257SE21304, C257SE21435, C257SE27133, C257SE27159

Reexamination Certificate

active

11209750

ABSTRACT:
A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions and/or the lightly doped LDD regions and/or the enhancement implanted regions omitted from at least one side of the gate electrode. The low threshold transistor is electrically connected to a high voltage transistor with a high threshold voltage of about 0.7 V.

REFERENCES:
patent: 6204524 (2001-03-01), Rhodes
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes

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