NAND flash memory device and programming method

Details NAND flash memory device and programming method NAND flash memory device and programming method

2008-07-22

2008-07-22

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185170, C365S185230

Reexamination Certificate

active

11500410

ABSTRACT:
A NAND flash memory device and a programming method thereof capable of improving a program speed during a multi-level cell programming operation are provided. The device performs a programming operation using an ISPP method. Additionally, the device includes a memory cell storing multi-bit data; a program voltage generating circuit generating a program voltage to be supplied to the memory cell; and a program voltage controller controlling a start level of the program voltage. The device supplies an LSB start voltage to a selected word line during an LSB program, and an MSB start voltage higher than the LSB start voltage to the selected word line during an MSB program.

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