Preamorphization to minimize void formation

Details Preamorphization to minimize void formation Preamorphization to minimize void formation

2008-04-22

2008-04-22

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S642000, C438S658000, C257SE29159, C257SE21582

Reexamination Certificate

active

11173244

ABSTRACT:
Methods are described for eliminating void formation during the fabrication of and/or operation of memory cells/devices. According to one aspect of the present disclosure, the methods to eliminate voids include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using preamorphization implants, and formation of a conductivity facilitating layer. According to another aspect of the present disclosure, the methods to eliminate voids include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using a contact with a plasma, and formation of a conductivity facilitating layer.

REFERENCES:
patent: 5506449 (1996-04-01), Nakano et al.
patent: 6268291 (2001-07-01), Andricacos et al.
patent: 6274511 (2001-08-01), Wieczorek et al.
patent: 6335289 (2002-01-01), Kikuchi
patent: 6375761 (2002-04-01), Gambino et al.
patent: 6387784 (2002-05-01), Chong et al.
patent: 6633085 (2003-10-01), Besser et al.
patent: 6656763 (2003-12-01), Oglesby et al.
patent: 6686263 (2004-02-01), Lopatin et al.
patent: 6746971 (2004-06-01), Ngo et al.
patent: 6753247 (2004-06-01), Okoroanyanwu et al.
patent: 6768157 (2004-07-01), Krieger et al.
patent: 6770905 (2004-08-01), Buynoski et al.
patent: 6773954 (2004-08-01), Subramanian et al.
patent: 6781868 (2004-08-01), Bulovic et al.
patent: 6787458 (2004-09-01), Tripsas et al.
patent: 6803267 (2004-10-01), Subramanian et al.
patent: 6825060 (2004-11-01), Lyons et al.
patent: 6836398 (2004-12-01), Subramanian et al.
patent: 6852586 (2005-02-01), Buynoski et al.
patent: 6858481 (2005-02-01), Krieger et al.
patent: 6864522 (2005-03-01), Krieger et al.
patent: 6878961 (2005-04-01), Lyons et al.
patent: 2001/0053592 (2001-12-01), Sone
patent: 2002/0055265 (2002-05-01), Ring
patent: 2004/0084670 (2004-05-01), Tripsas et al.
patent: 2004/0108501 (2004-06-01), Cheung et al.
patent: 2004/0157407 (2004-08-01), Tong et al.
patent: 2004/0238963 (2004-12-01), Fujisawa
patent: 2006/0051968 (2006-03-01), Joshi et al.
patent: 1134802 (2001-09-01), None
International Search Report for PCT/US06/026045 dated Nov. 23, 2006.

Affiliated with

Also associated with

Rating

Preamorphization to minimize void formation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Preamorphization to minimize void formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Preamorphization to minimize void formation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3912021