Semiconductor device having integrated circuit contact

Details Semiconductor device having integrated circuit contact Semiconductor device having integrated circuit contact

2008-01-01

2008-01-01

Le, Thao X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S752000, C257SE21579

Reexamination Certificate

active

10443471

ABSTRACT:
A process for forming vertical contacts in the manufacture of integrated circuits, and devices so manufactured, is disclosed. The process eliminates the need for precise mask alignment and allows the etch of the contact hole to be controlled independent of the etch of the interconnect trough. The process includes the steps of: forming an insulating layer on the surface of a substrate; forming an etch stop layer on the surface of the insulating layer; forming an opening in the etch stop layer; etching to a first depth through the opening in the etch stop layer and into the insulating layer to form an interconnect trough; forming a photoresist mask on the surface of the etch stop layer and in the trough; and continuing to etch through the insulating layer until reaching the surface of the substrate to form a contact hole. The above process may be repeated one or more times during the formation of multilevel metal integrated circuits.

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