Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-27
2008-05-27
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S024000
Reexamination Certificate
active
10995537
ABSTRACT:
A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.
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Chung Ho-Kyoon
Kim Hye-Dong
Koo Jae-Bon
Lee Ul-Ho
Suh Min-Chul
Bushnell , Esq. Robert E.
Picardat Kevin M
Samsung SDI & Co., Ltd.
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