Method for front end of line fabrication

Etching a substrate: processes – Gas phase etching of substrate

Reexamination Certificate

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Details

C438S715000, C438S692000, C438S732000

Reexamination Certificate

active

11137609

ABSTRACT:
A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.

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