Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-05-20
2008-05-20
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
11187910
ABSTRACT:
In a tunneling magneto-resistance element, first and second free magnetic layers have a magnetization direction according to storage data. The first and second magnetic layers are arranged with an intermediate layer interposed therebetween. The intermediate layer is formed from a non-magnetic conductor. In data write operation, a data write current having a direction according to a write data level is supplied to the intermediate layer. A magnetic field generated by the current flowing through the intermediate layer magnetizes the first and second free magnetic layers with a looped manner.
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Mai Son L.
Renesas Technology Corp.
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