Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-04-15
2008-04-15
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S455000, C438S406000, C438S295000, C257SE21561, C257SE21563
Reexamination Certificate
active
11218185
ABSTRACT:
The invention encompasses a method of forming a semiconductor on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the insulative mass. The material comprises one or more of nitrogen argon, fluorine, bromine, chlorine, iodine and germanium.
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Fourson George
Maldonado Julio J.
Micro)n Technology, Inc.
Wells St. John P.S.
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