Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2008-03-25
2008-03-25
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230030, C365S236000, C365S233100
Reexamination Certificate
active
11562856
ABSTRACT:
A dynamic random access memory device includes banks of dynamic memory cells. The device performs a refresh operation in response to receiving a self refresh command, by refreshing rows of the memory cells located in each of the banks. Further, a refresh frequency for the refresh operation is selected such that the refresh frequency is minimized to conserve power consumed by the memory device while being sufficient to refresh the rows of the memory cells.
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Barth Richard M.
Davis Paul G.
Hampel Craig E.
Tsern Ely K.
Lam David
Morgan & Lewis & Bockius, LLP
Rambus Inc.
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