Methods of forming metal oxide and semimetal oxide

Details Methods of forming metal oxide and semimetal oxide Methods of forming metal oxide and semimetal oxide

2008-04-29

2008-04-29

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S765000, C438S770000, C438S775000, C257SE21101

Reexamination Certificate

active

11233967

ABSTRACT:
The invention includes methods of forming metal oxide and/or semimetal oxide. The invention can include formation of at least one metal-and-halogen-containing material and/or at least one semimetal-and-halogen-containing material over a semiconductor substrate surface. The material can be subjected to aminolysis followed by oxidation to convert the material to metal oxide and/or semimetal oxide. The aminolysis and oxidation can be separate ALD steps relative to one another, or can be conducted in a reaction chamber in a common processing step.

REFERENCES:
patent: 5389401 (1995-02-01), Gordon
patent: 6960537 (2005-11-01), Shero et al.
patent: 2004/0043600 (2004-03-01), Vaartstra

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