Thin film transistor and method of manufacturing the same

Details Thin film transistor and method of manufacturing the same Thin film transistor and method of manufacturing the same

Filed on

2007-10-30

Date issued

2007-10-30

Examiner

Schillinger, Laura M. (Department: 2813)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

On insulating substrate or layer

Other Related Categories

C438S151000, C438S162000, C438S166000

Type

Reexamination Certificate

Status

active

Patent number

10994265

Description

ABSTRACT:
A method of manufacturing a thin film transistor that provides high electric field mobility is disclosed. In one embodiment, the method includes: a) forming an amorphous silicon layer and a blocking layer on an insulating substrate; b) forming a photoresist layer having first and second photoresist patterns on the blocking layer, the first and second photoresist patterns spaced apart from each other; c) etching the blocking layer using the first photoresist pattern as a mask to form first and second blocking patterns; d) reflowing the photoresist layer, so that the first and second photoresist patterns abut on each other to entirely cover the first and second blocking patterns; e) forming a capping layer and a metal layer over an entire first surface of the insulating substrate; f) removing the photoresist layer to expose the blocking layer and an offset region between the blocking layer and the metal layer; g) crystallizing the amorphous silicon layer by diffusing metals in the metal layer through the capping into the amorphous silicon layer; h) etching the poly silicon layer using the first and second blocking patterns as a mask to form first and second semiconductor layers; and i) removing the first and second blocking patterns.

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