Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-10-23
2007-10-23
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S514000, C438S582000, C438S659000, C438S508000
Reexamination Certificate
active
11029842
ABSTRACT:
A method is provided for producing a solid-state imaging device in which a plurality of pixels are arranged two-dimensionally so as to form a photosensitive region, each of the pixels including a photodiode that photoelectrically converts incident light to store a signal charge and read-out elements for reading out the signal charge from the photodiode, and a vertical driving circuit for driving the plurality of pixels in the photosensitive region in a row direction, a horizontal driving circuit for driving the same in a column direction and an amplify circuit for amplifying an output signal are formed with MOS transistors. The method includes: forming an element isolation region with a STI (Shallow Trench Isolation) structure between the plurality of photodiodes and the plurality of MOS transistors; and forming a gate oxide film of the MOS transistors to have a thickness of 10 nm or less. All of heat treatment processes after formation of gates of the MOS transistors are performed at a temperature range that does not exceed 900° C. In a MOS-type solid-state imaging device having a fine structure, the occurrence of image defects can be suppressed sufficiently.
REFERENCES:
patent: 6441444 (2002-08-01), Tsuji et al.
patent: 6570222 (2003-05-01), Nozaki et al.
patent: 6692984 (2004-02-01), Yonezawa et al.
patent: 6855641 (2005-02-01), Ryu et al.
patent: 2003/0197228 (2003-10-01), Okuda et al.
patent: 2005/0164440 (2005-07-01), Yaung et al.
patent: 2000-13370 (2000-05-01), None
patent: 2001-345439 (2001-12-01), None
patent: 2002-270808 (2002-09-01), None
patent: 2002-305296 (2002-10-01), None
patent: 2003-264277 (2003-09-01), None
Hamre Schumann Mueller & Larson P.C.
Le Dung A.
Matsushita Electric - Industrial Co., Ltd.
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