Phase change resistor cell, nonvolatile memory device and...

Details Phase change resistor cell, nonvolatile memory device and... Phase change resistor cell, nonvolatile memory device and...

2007-10-16

2007-10-16

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S175000, C365S113000

Reexamination Certificate

active

10876464

ABSTRACT:
A nonvolatile memory device features a phase change resistor cell as a cross-point cell using a phase change resistor and a serial diode switch. The phase change resistor has logic data corresponding to a crystallization state changed by the amount of current supplied from a word line. The serial diode switch, connected between the phase change resistor and a bit line, comprises at least two or more diode switches serially connected, wherein each end portion of the diode switch is connected in common to the phase change resistor and the bit line and selectively switched depending on voltages applied to the word line and the bit line. The nonvolatile memory device is configured with the phase change resistor cell, and voltages applied to a word line and a bit line are controlled to read and write data. As a result, the whole size of the memory device is reduced.

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patent: 1020030081900 (2003-10-01), None

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