Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2007-08-21
2007-08-21
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S185010, C365S185180
Reexamination Certificate
active
10718662
ABSTRACT:
Metal nanocrystal memories are fabricated to include higher density states, stronger coupling with the channel, and better size scalability, than has been available with semiconductor nanocrystal devices. A self-assembled nanocrystal formation process by rapid thermal annealing of ultra thin metal film deposited on top of gate oxide is integrated with NMOSFET to fabricate such devices. Devices with Au, Ag, and Pt nanocrystals working in the F-N tunneling regime, with hot-carrier injection as the programming mechanism, demonstrate retention times up to 106s, and provide 2-bit-per-cell storage capability.
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Kan Edwin C.
Lee Chung-ho
Liu Zengtao
Cornell Research Foundation Inc.
Jones Tullar & Cooper P.C.
Lam David
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