Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-21
2007-08-21
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S602000, C438S606000, C257SE21127, C257SE21461
Reexamination Certificate
active
10699839
ABSTRACT:
This invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemical vapor deposition (MOCVD).The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaxial layer, such as Si0.1Ge0.9in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si01.Ge0.9due to the large mismatch between this layer and Si substrate.Furthermore, a subsequent 0.8 μm Si0.05Ge0.95layer, and/or optionally a further 0.8 μm Si0.02Ge0.98layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaxial layers.Finally, a GaAs epitaxial layer is grown on said Ge film by using MOCVD.
REFERENCES:
patent: 5141893 (1992-08-01), Ito et al.
patent: 5183776 (1993-02-01), Lee
patent: 5238869 (1993-08-01), Shichijo et al.
patent: 5308444 (1994-05-01), Fitzgerald, Jr. et al.
patent: 5438951 (1995-08-01), Tachikawa et al.
patent: 5473174 (1995-12-01), Ohsawa
patent: 5879962 (1999-03-01), DePuydt et al.
patent: 5959308 (1999-09-01), Shichijo et al.
patent: 6107635 (2000-08-01), Palathingal
patent: 6291321 (2001-09-01), Fitzgerald
patent: 6893936 (2005-05-01), Chen et al.
patent: 2004/0031979 (2004-02-01), Lochtefeld et al.
patent: 092120501 (2003-07-01), None
patent: 092120502 (2003-07-01), None
J. A. Carlin et. al.,Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates, Apr. 2000, American Institute of Physics, Applied Physics Letters, vol. 76, No. 14, pp. 1884-1886.
R. D. Bringans et. al.,Use of ZnSe as an interlayer for GaAs growth on Si, Jul. 1992, American Institute of Physics, Applied Physics Letters, vol. 61, No. 2, pp. 195-197.
J. Arokiaraj et. al.,High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2, Dec. 1999, American Institute of Physics, Applied Physics Letters, vol. 75, No. 24, pp. 3826-3828.
C. Kadow et. al.,Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates, Oct. 1999, American Institute of Physics, Applied Physics Letters, vol. 75, No. 17, pp. 2575-2577.
Y. R. Xing et. al.,Growth of high quality gallium arsenide on HF-etched silicon(001)by chemical beam epitaxy, Apr. 1993, American Institute of Physics, Applied Physics Letters, vol. 62, No. 14, pp. 1653-1655.
Michael Y. Frankel et. al.,Integration of low-temperature GaAs on Si substrates, Jan. 1993, American Institute of Physics, Applied Physics Letters, vol. 62, No. 3, pp. 255-257.
Chang Chung Yen
Chang Edward Y.
Luo Guangli
Yang Tsung Hsi
Huynh Andy
National Chiao-Tung University
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