Methods for manufacturing a finFET using a conventional...

Details Methods for manufacturing a finFET using a conventional... Methods for manufacturing a finFET using a conventional...

2007-08-28

2007-08-28

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S585000

Reexamination Certificate

active

10709129

ABSTRACT:
A method is provided for producing a fin structure on a semiconductor substrate using a thin SiGe layer to produce a void between a silicon substrate and a silicon fin portion. A fin structure produced by such a method is also provided.

REFERENCES:
patent: 6300182 (2001-10-01), Yu
patent: 6391695 (2002-05-01), Yu
patent: 6403434 (2002-06-01), Yu
patent: 6413802 (2002-07-01), Hu et al.
patent: 6451656 (2002-09-01), Yu et al.
patent: 6475869 (2002-11-01), Yu
patent: 6475890 (2002-11-01), Yu
patent: 6492212 (2002-12-01), Ieong et al.
patent: 6521502 (2003-02-01), Yu
patent: 6525403 (2003-02-01), Inaba et al.
patent: 6562665 (2003-05-01), Yu
patent: 6580137 (2003-06-01), Parke
patent: 6583469 (2003-06-01), Fried et al.
patent: 6605514 (2003-08-01), Tabery et al.
patent: 6610576 (2003-08-01), Nowak
patent: 6611029 (2003-08-01), Ahmed et al.
patent: 6642090 (2003-11-01), Fried et al.
patent: 6727186 (2004-04-01), Skotnicki et al.
patent: 2003/0102497 (2003-06-01), Fried et al.

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