Method of manufacturing a semiconductor device that includes...

Details Method of manufacturing a semiconductor device that includes... Method of manufacturing a semiconductor device that includes...

2007-08-07

2007-08-07

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S163000, C257SE21561

Reexamination Certificate

active

10832562

ABSTRACT:
In a complete depletion type SOI transistor, the roll-off of a threshold value is suppressed, independently from the formation of an SOI film to be thinner. As for a semiconductor device (1), the impurity concentration in a channel formation portion (10) is implanted not uniformly along the length direction of a gate (2) in the complete depletion type silicon on insulation (SOI) transistor. In other words, high concentration regions (11) where impurity concentrations are higher than that at a central portion in the end parts of the channel formation portion (10) on the side of a source (4) and a drain (5).

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