Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-12-25
2007-12-25
Purvis, Sue A. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S059000, C257S072000, C257SE27131, C349S043000
Reexamination Certificate
active
10026479
ABSTRACT:
An LCD panel includes a plurality of gate lines and gate electrodes formed on a substrate and a gate insulating film formed on the substrate including the gate lines and the gate electrodes. A semiconductor film is formed in a region on the gate insulating film and an ohmic contact film formed on the semiconductor film. A plurality of data lines cross the gate lines; a source electrode is formed on the ohmic contact film; and a pixel electrode is formed in a pixel region defined by the gate and data lines. A drain electrode is formed on the ohmic contact film, and has an uneven width. Since a portion of drain electrode that overlaps with the gate electrode has a smaller width than a width of other portions of the drain electrode, variation in an area of the drain electrode overlapped with the gate electrode is small, so that variation of the parasitic capacitance can be reduced, thereby improving picture quality.
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Kwak Dong Yeung
Lim Byoung Ho
Erdem Fazli
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
Purvis Sue A.
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